Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection
نویسندگان
چکیده
In this paper we propose a microwave detector based on a AlGaAs/ InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitrogen temperature is 38 V/W for 10 GHz radiations and is higher compared to that of modulation doped AlGaAs/GaAs of the same configuration.
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